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Grolltex — graphene rolling technologies
hBN transferred to your substrate

hBN transferred to your substrate

Monolayer hBN transferred onto your device substrate as a gate dielectric or encapsulation layer.

This configuration is quoted per order — sheet size, substrate and stack determine the price.

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SKU: HBN-XFER Category:

Specifications

Specification Value
Material Monolayer hexagonal boron nitride
Max diameter 8" (200 mm)
Standard substrates Si/SiO₂, quartz
Custom substrates On request
Band gap ~5.9 eV
Fabrication Class 100 cleanroom

Batch characterization

Representative data. The unit you receive ships with measurements from its own batch.

Raman spectrum of monolayer hBN — E₂g peak at ~1370 cm⁻¹. Counts against Raman shift (cm⁻¹).
Raman spectrum of monolayer hBN — E₂g peak at ~1370 cm⁻¹. Counts against Raman shift (cm⁻¹).
Dielectric strength
Per batch

Exceeds refractory alumina (Al₂O₃)

Layer count
1 (few-layer on request)

Stacked by van der Waals interaction

Lead time
By quote

Depends on substrate and volume

Optical micrograph — hBN, 50×, 50 μm scale
Optical micrograph — hBN, 50×, 50 μm scale
Optical micrograph — hBN edge, 100×, 25 μm scale
Optical micrograph — hBN edge, 100×, 25 μm scale
TEM — hBN lattice, 2.5 nm scale
TEM — hBN lattice, 2.5 nm scale

Citing this material

Monolayer CVD hexagonal boron nitride transferred to substrate (HBN-XFER), Grolltex, Inc., San Diego, CA.

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