hBN Coverage: 100% with sporadic adlayers (see optical image above)
Bandgap: 5.97 eV
Grain size: >4 μm
Raman Peak: 1370 /cm-1
Our 8-inch Si/SiO2 wafers are sourced from a reliable, quality-assured supplier.
Wafer Thickness : 725 +/- 25 μm
Oxide Thickness: 300nm
Resistivity: 5 – 30 Ω∙cm
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Do you need assistance with Raman measurements on your custom/modified hBN sample? We can help! Please inquire at support@Grolltex.com or call (858) 368-9065 for details.
“*The indicated product metrics are generic to our transfer process. For all hBN-on-copper products, the displayed range represents electronic data that we have obtained using our in-house transfer capabilities to transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
Data files for Raman measurements are available upon request. Please send an email including your name, institution, and product serial number to support@Grolltex.com and indicate which file(s) you would like.
Do you have more specific questions about our products? Do you have inquiries about custom or bulk orders? Do you need help with Raman measurements of graphene or hBN? Please feel free to send us an email at support@Grolltex.com, or call us at (858) 368-9065.